DMN62D1SFB-7B 数据手册
其他文档
DMN62D1SFB-7B 6 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Diodes Incorporated DMN62D1SFB-7B
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 470mW
- Total Gate Charge (Qg@Vgs): 2.8nC@10V
- Input Capacitance (Ciss@Vds): 80pF@40V
- Continuous Drain Current (Id): 410mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@40mA,10V
- Package: DFN-3(0.6x1)
- Manufacturer: Diodes Incorporated
- Part id: 831466